simple drive requirement bv dss -20v small package outline r ds(on) 130m surface mount device i d - 2.6a description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a thermal resistance junction-ambient 3 max. 90 /w parameter drain-source voltage gate-source voltage continuous drain current 3 -55 to 150 linear derating factor 1.38 -55 to 150 thermal data parameter total power dissipation operating junction temperature range storage temperature range continuous drain current 3 -2.1 pulsed drain current 1,2 -10 AP2301GN rating - 20 12 -2.6 0.01 the advanced power mosfets from apec provide the designer with the best combination of fast switching, , low on-resistance and cost-effectiveness. the sot-23 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g d s d g s sot-23 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
AP2301GN electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.1 - v/ r ds(on) static drain-source on-resistance 2 v gs =-5v, i d =-2.8a - - 130 m v gs =-2.8v, i d =-2.0a - - 190 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - - v g fs forward transconductance v ds =-5v, i d =-2.8a - 4.4 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -10 ua i gss gate-source leakage v gs =12v - - na q g total gate charge 2 i d =-2.8a - 5.2 10 nc q gs gate-source charge v ds =-6v - 1.36 - nc q gd gate-drain ("miller") charge v gs =-5v - 0.6 - nc t d(on) turn-on delay time 2 v ds =-15v - 5.2 - ns t r rise time i d =-1a - 9.7 - ns t d(off) turn-off delay time r g =6 , v gs =-10v - 19 - ns t f fall time r d =15 -29- ns c iss input capacitance v gs =0v - 295 - pf c oss output capacitance v ds =-6v - 170 - pf c rss reverse transfer capacitance f=1.0mhz - 65 - pf source-drain diode symbol parameter test conditions min. typ. max. units i s continuous source current ( body diode ) v d =v g =0v , v s =-1.2v - - -1 a i sm pulsed source current ( body diode ) 1 - - -10 a v sd forward on voltage 2 t j =25 , i s =-1.6a, v gs =0v - - -1.2 v 100 2 of 2 sales@twtysemi.com http://www.twtysemi.com 4008-318-123 product specification
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